- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24704 > 934056270118 (NXP SEMICONDUCTORS) 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 934056270118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 322K |
| 代理商： | 934056270118 |
Philips Semiconductors
BUK7575-55A; BUK7675-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 8 December 2000
2 of 15
9397 750 07696
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
20.3
A
Ptot
total power dissipation
Tmb =25 °C
62
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =10A
Tj =25 °C
75
m
Tj = 175 °C
150
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
20.3
A
14.3
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
81
A
Ptot
total power dissipation
62
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
20.3
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
81
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =11A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ;
starting Tmb =25 °C
30.3
mJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056259127 | 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056272118 | 11 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056261127 | 11 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056278127 | 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056284118 | 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復。