參數(shù)資料
型號(hào)： 934056195127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 35 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 11/15頁(yè)
文件大小： 302K
代理商： 934056195127
Philips Semiconductors
BUK7535-55A; BUK7635-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 10 November 2000
5 of 15
9397 750 07646
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =20A;
Tj =25 °C
30
35
m
Tj = 175 °C
70
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
650
872
pF
Coss
output capacitance
170
205
pF
Crss
reverse transfer capacitance
110
153
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =10V; RG =10 ;
10
ns
tr
rise time
62
ns
td(off)
turn-off delay time
24
ns
tf
fall time
20
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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