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參數(shù)資料
| 型號(hào)： | 934056194115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 12/13頁(yè) |
| 文件大小： | 284K |
| 代理商： | 934056194115 |
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Philips Semiconductors
BUK78150-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 30 January 2001
8 of 13
9397 750 07738
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =5A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nc22
0
2
4
6
8
10
02
46
8
10
VGS (V)
ID
(A)
Tj = 150
OC
Tj = 25
OC
03nb87
0
1
2
3
4
5
6
7
8
9
10
02
46
QG (nC)
VGS
(V)
VDD= 44 V
VDD= 14 V
03nc23
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
VSD (V)
IS
(A)
Tj = 150
OCT
j = 25
OC
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