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參數資料
| 型號： | 934056141115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, 2 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 59K |
| 代理商： | 934056141115 |
2000 Feb 14
2
Philips Semiconductors
Product specication
SMA ultra fast low-loss
controlled avalanche rectiers
ES1 series
FEATURES
Glass passivated
High maximum operating temperature
Ideal for surface mount automotive applications
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
UL 94V-O classified plastic package
Shipped in 12 mm embossed tape
Marking: cathode, date code, type code
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
olumns
MSA474
Top view
Side view
cathode
band
ka
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
ES1A
50
V
ES1B
100
V
ES1C
150
V
ES1D
200
V
VR
continuous reverse voltage
ES1A
50
V
ES1B
100
V
ES1C
150
V
ES1D
200
V
VRMS
root mean square voltage
ES1A
35
V
ES1B
70
V
ES1C
105
V
ES1D
140
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 120 °C; see Fig.2
1A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
Tj =25 °C prior to surge;
VR =VRRMmax
25
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
See Fig.3
65
+175
°C
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