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參數(shù)資料
| 型號(hào)： | 934056127115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 934056127115 |
2000 Feb 14
3
Philips Semiconductors
Product specication
SMA controlled avalanche rectiers
S1 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m. For more
information please refer to the
‘General Part of associated Handbook’.
VRMS
root mean square voltage
S1A
35
V
S1B
70
V
S1D
140
V
S1G
280
V
S1J
420
V
S1K
560
V
S1M
700
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 110 °C; see Fig.2
1A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
Tj =25 °C prior to surge;
VR =VRRMmax
S1A to S1J
30
A
S1K and S1M
25
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
See Fig.3
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
1.1
V
IR
reverse current
VR =VRRMmax; see Fig.5
S1A to S1J
1
A
S1K and S1M
5
A
VR =VRRMmax; Tj = 165 °C; see Fig.5
50
A
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.9
1
s
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.6
8
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point; see Fig.7
27
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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