參數(shù)資料
型號: 934055958115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, CMPAK-4
文件頁數(shù): 16/16頁
文件大小: 116K
代理商: 934055958115
2000 Mar 29
9
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R;
BF1202WR
handbook, full pagewidth
DUT
C1
4.7 nF
R1
10 k
MGS315
C4
4.7 nF
L1
2.2 H
C3
4.7 nF
RL
50
VGG
VAGC
VDS
RGEN
50
VI
R2
50
4.7 nF
C2
RG1
Fig.21 Cross-modulation test set-up.
Table 1
Scattering parameters: VDS =5V; VG2-S =4V; ID = 12 mA; Tamb =25 °C
Table 2
Noise data: VDS =5V; VG2-S =4V; ID = 12 mA; Tamb =25 °C
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.988
3.26
2.989
176.2
0.0005
92.6
0.995
1.50
100
0.988
6.52
3.017
172.5
0.0009
88.0
0.995
3.01
200
0.984
12.99
2.990
165.0
0.0018
82.5
0.994
5.95
300
0.977
19.39
2.949
157.6
0.0027
78.2
0.992
8.86
400
0.965
25.65
2.913
150.3
0.0036
75.4
0.990
11.79
500
0.951
31.76
2.853
143.2
0.0039
71.8
0.988
14.65
600
0.936
37.68
2.793
136.3
0.0042
69.9
0.986
17.41
700
0.919
43.42
2.727
129.5
0.0044
68.9
0.984
20.10
800
0.903
48.94
2.664
123.0
0.0043
68.5
0.980
22.69
900
0.887
54.25
2.593
116.7
0.0041
70.7
0.975
25.27
1000
0.870
59.34
2.518
110.5
0.0038
72.4
0.970
27.90
f
(MHz)
Fmin
(dB)
Γopt
Rn
(
)
(ratio)
(deg)
400
0.9
0.805
28.5
50
800
1.1
0.725
47.2
40
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