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參數(shù)資料
| 型號(hào)： | 934055951112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.08 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 934055951112 |
1996 May 24
4
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYM26 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Figs 17 and 18
BYM26A to C
85
pF
BYM26D and E
75
pF
BYM26F and G
65
pF
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = 1A/s;
see Fig.21
BYM26A to C
7A/
s
BYM26D and E
6A/
s
BYM26F and G
5A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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