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參數(shù)資料
| 型號(hào)： | 934055946115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934055946115 |
2001 Nov 07
2
Philips Semiconductors
Product specication
NPN/PNP general purpose transistor
BC847BVN
FEATURES
300 mW total power dissipation
Very small 1.6 mm x 1.2 mm ultra thin package
Excellent coplanarity due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduced required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Switch mode power supply complementary MOSFET
driver
Complementary driver for audio amplifiers.
DESCRIPTION
NPN/PNP transistor pair in a SOT666 plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC847BVN
13
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM443
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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