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參數(shù)資料
| 型號： | 934055914112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 58K |
| 代理商： | 934055914112 |
2001 Nov 02
4
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain power doubler amplier
BGD712
Notes
1. Slope straight line is defined as gain at 750 MHz
gain at 45 MHz.
2. Tilt = 7.3 dB (55 to 547 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
4. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
CSO
composite second
order distortion
112 channels at; Vo = 44 dBmV;
fm = 746.5 MHz
63
dB
79 channels at; Vo = 44 dBmV;
fm = 548.5 MHz
68
dB
79 channels; fm = 746.5 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
62
dB
d2
second order distortion
note 3
74
dB
Vo
output voltage
dim = 60 dB; note 4
64
dBmV
NF
noise gure
f = 50 MHz
5.5
dB
f = 550 MHz
5.5
dB
f = 750 MHz
7dB
Itot
total current
consumption (DC)
note 5
380
395
410
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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