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參數(shù)資料
| 型號(hào)： | 934055908115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | 934055908115 |
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2000 Apr 03
6
Philips Semiconductors
Product specication
UHF wideband transistor
PRF949
handbook, halfpage
010
20
40
gain
(dB)
GUM
MSG
20
0
16
MGS500
30
12
8
4
IC (mA)
Gmax
Fig.6
Gain as a function of collector current;
typical values.
f = 1 GHz; VCE =6V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGS501
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.7
Gain as a function of frequency; typical
values.
IC = 5 mA; VCE =6V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGR502
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.8
Gain as a function of frequency; typical
values.
IC = 15 mA; VCE =6V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGS503
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.9
Gain as a function of frequency; typical
values.
IC = 30 mA; VCE =6V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
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