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| 型號(hào)： | 934055879127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 329K |
| 代理商： | 934055879127 |
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Philips Semiconductors
BUK9511-55A; BUK9611-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 7 February 2001
6 of 15
9397 750 07916
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
S = 25 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
77
ns
Qr
recovered charge
230
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd75
0
50
100
150
200
250
300
350
02
46
8
10
VDS (V)
ID
(A)
VGS (V) =
2.2
3
4
5
6
10
8
03nd74
6
7
8
9
10
11
12
2468
10
VGS (V)
RDSon
(m
)
03nd76
0
5
10
15
20
25
0
50
100
150
200
250
ID (A)
RDSon
VGS (V) =
5
4
3
3.2 3.4 3.6 3.8
(m
)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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