參數(shù)資料
型號(hào)： 934055823135
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù)： 14/16頁
文件大?。?/td> 120K
代理商： 934055823135
2000 Apr 11
7
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
handbook, halfpage
0
40
20
30
10
0
MGS368
26
4
IG1
(
A)
VG2-S (V)
4.5 V
4 V
3.5 V
3 V
VG1-S = 5 V
Fig.11 Gate 1 current as a function of gate 2
voltage; typical values.
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.20.
handbook, halfpage
01
2
4
0
50
10
3
VAGC (V)
gain
reduction
(dB)
20
30
40
MCD968
Fig.12 Typical gain reduction as a function of the
AGC voltage; see Fig.20.
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =25 °C;
RG1 = 120 k (connected to VGG); see Fig.20.
handbook, halfpage
020
60
120
110
90
80
100
40
MGS369
Vunw
(dB
V)
gain reduction (dB)
Fig.13 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values.
VDS = 5 V; VGG = 5 V; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C;
RG1 = 120 k (connected to VGG); see Fig.20.
handbook, halfpage
050
20
0
4
8
12
16
10
20
30
40
gain reduction (dB)
ID
(mA)
MCD969
Fig.14 Drain current as a function of gain
reduction; typical values.
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =25 °C;
RG1 = 120 k (connected to VGG); see Fig.20.
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