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參數(shù)資料
| 型號： | 934055816118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 163K |
| 代理商： | 934055816118 |
October 1999
6
Rev 1.100
Philips Semiconductors
Product specication
PSMN005-25D
N-channel logic level TrenchMOS(TM) transistor
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
0
5
10
15
20
25
30
35
40
45
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
0
5
10
15
20
25
30
35
40
45
50
Drain current, ID (A)
Transconductance, gfs (S)
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
VDS = 5 V
Normalised On-state Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction temperature, Tj (C)
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
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