參數(shù)資料
型號(hào)： 934055774127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-67, FPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 62K
代理商： 934055774127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 200 V
Fast switching
I
D = 7.6 A
R
DS(ON) ≤ 230 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN
DESCRIPTION
1
gate
2
drain
3
source
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
hs =
25 C; V
GS = 10 V
-
7.6
A
T
hs = 100 C; VGS = 10 V
-
4.8
A
I
DM
Pulsed drain current
T
hs = 25 C
-
30
A
P
D
Total power dissipation
T
hs = 25 C
-
30
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature
d
g
s
12 3
case
12 3
case
November 2000
1
Rev 1.100
相關(guān)PDF資料
PDF描述
934055780127 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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05WS20 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055782127 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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