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參數(shù)資料
| 型號： | 934055717118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 167K |
| 代理商： | 934055717118 |
August 1999
2
Rev 1.000
Philips Semiconductors
Product specication
PSMN035-150B; PSMN035-150P
N-channel TrenchMOS(TM) transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 150 V
Fast switching
Low thermal resistance
I
D = 50 A
R
DS(ON) ≤ 35 m
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PSMN035-150P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN035-150B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
150
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
150
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb = 25 C
-
50
A
T
mb = 100 C
-
36
A
I
DM
Pulsed drain current
T
mb = 25 C
-
200
A
P
D
Total power dissipation
T
mb = 25 C
-
250
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
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