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參數(shù)資料
| 型號(hào)： | 934055714215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 934055714215 |
2003 Mar 25
3
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ≤ 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
600
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 0.1 mA
200
mV
IF =1mA
260
mV
IF =10mA
340
mV
IF =30mA
420
mV
IF = 100 mA
600
mV
IR
reverse current
VR = 25 V; note 1; see Fig.7
2
A
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.8
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
500
K/W
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