參數(shù)資料
型號(hào): 934055701118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 模擬信號(hào)調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO16
封裝: 3.90 MM, PLASTIC, MS-012, SOT-109-1, SO-16
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 65K
代理商: 934055701118
2000 Jun 09
3
Philips Semiconductors
Product specication
Magnetic Field Sensor
KMZ52
QUICK REFERENCE DATA
Notes
1. The compensation coil generates a field Hcomp =Acomp × Icomp in addition to the external field Hext. Sensor output will
become zero if Hext =Hcomp.
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC
bridge supply voltage
58V
S
sensitivity (uncompensated)
12
16
Voffset
offset voltage per supply voltage
1.5
0
+1.5
mV/V
Rbridge
bridge resistance
123k
Rcomp
compensation coil resistance
100
170
300
Acomp
eld factor of compensation coil; note 1
19
22
25
Rip
resistance of set/reset coil
1
2
3
Iip
recommended ipping current for stable operation; note 2
±800
±1000 ±1200 mA
tip
ip pulse duration; note 2
1
3
100
s
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
bridge supply voltage
8V
Ptot
total power dissipation
130
mW
Tstg
storage temperature
65
+150
°C
Tamb
maximum operating temperature
40
125
°C
Icomp
maximum compensation current
15
mA
Iip (max)
maximum ipping current
1500
mA
Pip (max)
maximum ipping power dissipation
50
mW
Visol
voltage between isolated systems:
ip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
ip coil and compensation coil
60
V
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
terminal resistance from junction to ambient
105
K/W
mV/V
kA/m
--------------
A/m
mA
----------
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