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參數(shù)資料
| 型號(hào)： | 934055588112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 2.9 A, 1000 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大小： | 114K |
| 代理商： | 934055588112 |
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1996 Sep 18
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYM36 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 8; 9 and 10
BYM36A to C
37
A
BYM36D and E
33
A
BYM36F and G
27
A
IFRM
repetitive peak forward current
Tamb =65 °C; see Figs 11; 12 and 13
BYM36A to C
13
A
BYM36D and E
11
A
BYM36F and G
10
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
65
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Figs 17 and 18
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 3 A; Tj =Tj max;
see Figs 19; 20 and 21
BYM36A to C
1.22
V
BYM36D and E
1.28
V
BYM36F and G
1.24
V
VF
forward voltage
IF =3A;
see Figs 19; 20 and 21
BYM36A to C
1.60
V
BYM36D and E
1.78
V
BYM36F and G
1.57
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYM36A
300
V
BYM36B
500
V
BYM36C
700
V
BYM36D
900
V
BYM36E
1100
V
BYM36F
1300
V
BYM36G
1500
V
IR
reverse current
VR =VRRMmax; see Fig.22
5
A
VR =VRRMmax;
Tj = 165 °C; see Fig.22
150
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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