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參數(shù)資料
| 型號(hào)： | 934055568112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 934055568112 |
2001 Nov 01
6
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
BGD904L
Fig.5
Composite triple beat as a function of
frequency under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS455
(2)
(3)
(4)
(1)
Fig.6
Cross modulation as a function of frequency
under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS456
(2)
(3)
(4)
(1)
Fig.7
Composite second order distortion as a
function of frequency under tilted
conditions.
ZS =ZL =75 ; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS457
(2)
(3)
(4)
(1)
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