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參數(shù)資料
| 型號： | 934055567112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 76K |
| 代理商： | 934055567112 |
2001 Oct 30
2
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler amplier
BGD902L
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Low DC current consumption.
APPLICATIONS
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a supply voltage of 24 V.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18.2
18.8
dB
f = 900 MHz
19
20
dB
Itot
total current consumption (DC)
VB = 24 V
350
380
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
30
V
Vi
RF input voltage
70
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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