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參數(shù)資料
| 型號： | 934055545127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 934055545127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 6.2 A;
-
580
mJ
energy
t
p = 720 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 10 V; refer
to fig;14
I
AS
Peak non-repetitive
-
16
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
1.1
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
200
-
V
voltage
T
j = -55C
178
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 175C
1
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 8 A
-
130
180
m
resistance
T
j = 175C
-
522
m
I
GSS
Gate source leakage current V
GS = ± 20 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 200 V; VGS = 0 V;
-
0.05
10
A
current
V
DS = 160 V; VGS = 0 V; Tj = 175C
-
250
A
Q
g(tot)
Total gate charge
I
D = 18 A; VDD = 160 V; VGS = 10 V
-
63
nC
Q
gs
Gate-source charge
-
12
nC
Q
gd
Gate-drain (Miller) charge
-
35
nC
t
d on
Turn-on delay time
V
DD = 100 V; RD = 5.6 ;
-
12
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-45
-
ns
t
d off
Turn-off delay time
Resistive load
-
54
-
ns
t
f
Turn-off fall time
-
38
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1850
-
pF
C
oss
Output capacitance
-
170
-
pF
C
rss
Feedback capacitance
-
91
-
pF
August 1999
2
Rev 1.100
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