參數(shù)資料
型號: 934055501112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁數(shù): 2/8頁
文件大小: 49K
代理商: 934055501112
2002 Apr 18
2
Philips Semiconductors
Product specication
860 MHz, 25.5 dB gain push-pull amplier
CGY887A
FEATURES
High gain
Superior linearity
Extremely low noise
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid dynamic range amplifier module in a SOT115J
package operating with a voltage supply of 24 V (DC),
employing both GaAs and Si dies.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
25.2
25.8
dB
f = 870 MHz
25.7
27
dB
Itot
total current consumption (DC)
VB =24V
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
75
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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