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參數(shù)資料
| 型號： | 934055451118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 934055451118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN210T
TrenchMOS
TM transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source diode
T
a =
25 C
-
2.2
A
current (per MOSFET)
I
SM
Pulsed source diode current
-
14
A
(per MOSFET)
V
SD
Diode forward voltage
I
F = 1.25 A; VGS = 0 V
-
0.82
1.2
V
t
rr
Reverse recovery time
I
F = 1.25 A; -dIF/dt = 100 A/s;
-
69
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
55
-
nC
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ta); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
a = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-a = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
Tamb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHN210
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
10 s
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
20
40
60
80
100
120
140
Ambient temperature, Tamb (C)
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHN210
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
March 1999
3
Rev 1.000
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