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參數(shù)資料
| 型號： | 934055444165 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 71K |
| 代理商： | 934055444165 |
2001 Feb 1
4
Philips Semiconductors
Product specication
NPN/PNP resistor-equipped transistors
PUMD48
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector cut-off current
IE = 0; VCB =50V
100
nA
ICEO
collector cut-off current
IB = 0; VCE =30V
1
A
IB = 0; VCE =30V; Tj = 150 °C
50
A
Transistor TR1 (NPN)
IEBO
emitter cut-off current
IC = 0; VEB =5V
90
A
hFE
DC current gain
IC = 5 mA; VCE =5V
80
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input-off voltage
IC = 100 A; VCE =5V
1.2
0.8
V
Vi(on)
input-on voltage
IC = 2 mA; VCE = 0.3 V
3
1.6
V
R1
input resistor
33
47
61
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
Transistor TR2 (PNP)
IEBO
emitter cut-off current
IC = 0; VEB = 5V
180
A
hFE
DC current gain
IC = 10 mA; VCE = 5 V
100
VCEsat
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
100
mV
Vi(off)
input-off voltage
IC = 100 A; VCE = 5V
0.6
0.5
V
Vi(on)
input-on voltage
IC = 5 mA; VCE = 0.3 V
1.1
0.75
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
17
21
26
Cc
collector capacitance
IE =ie = 0; VCB = 10 V;
f = 1 MHz
3pF
R2
R1
-------
R2
R1
-------
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