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參數(shù)資料
| 型號(hào)： | 934055413118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 320K |
| 代理商： | 934055413118 |
Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS standard level FET
Product data
Rev. 02 — 03 July 2001
2 of 15
9397 750 08421
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
154
A
Ptot
total power dissipation
Tmb =25 °C
300
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A
Tj =25 °C
5.3
6.3
m
Tj = 175 °C
13.2
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
154
A
75
A
75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
616
A
Ptot
total power dissipation
300
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
154
A
75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
616
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ;
starting Tmb =25 °C
1.1
J
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