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參數(shù)資料
| 型號： | 934055412118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 54K |
| 代理商： | 934055412118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9605-30A
Logic level FET
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.11. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.12. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
34567
89
10
3
3.5
4
4.5
5
5.5
6
6.5
RDS(ON)/mOhm
VGS/V
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
204060
80
100
0
50
100
150
gfs/S
ID/A
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
August 1999
4
Rev 1.100
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