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參數(shù)資料
| 型號： | 934055411118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 934055411118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7605-30A
Standard level FET
Fig.13. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 50 A; parameter VDS
Fig.15. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.16. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
Fig.17. Avalanche energy test circuit.
Fig.18. Switching test circuit.
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
Thousands
pF
VDS/V
Ciss
Coss
Crss
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
VGS/V
QG/nC
VDS =
14V
24V
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
60
80
100
ID/A
VSDS/V
Tj/C =
175
25
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
August 1999
5
Rev 1.100
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