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參數(shù)資料
| 型號(hào)： | 934055355115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 66K |
| 代理商： | 934055355115 |
2001 Jan 09
3
Philips Semiconductors
Product specication
High-speed double diodes
1PS89SS04; 1PS89SS05; 1PS89SS06
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
Ptot
total power dissipation (per package) Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF =1mA
610
mV
IF =10mA
740
mV
IF =50mA
1V
IF = 100 mA
1.2
V
IR
reverse current
see Fig.8
VR =25V
30
nA
VR =80V
0.5
A
VR = 25 V; Tj = 150 °C
30
A
VR = 80 V; Tj = 150 °C
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.9
1PS89SS04
1.5
pF
1PS89SS05
1.5
pF
1PS89SS06
2pF
trr
reverse recovery time
switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA;
see Fig.10
4ns
Vfr
forward recovery voltage
switched to IF = 10 mA; tr =20ns;
see Fig.11
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point both diodes loaded
1PS89SS04
55
K/W
1PS89SS05
70
K/W
1PS89SS06
70
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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