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參數(shù)資料
| 型號： | 934055349118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 934055349118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP21N06LT, PHB21N06LT
Logic level FET
PHD21N06LT
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS)
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID)
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
5
10
15
20
25
30
35
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.8 V
Tj = 25 C
VGS = 10V
3 V
3.2 V
3.4 V
2.4 V
5 V
2.6 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
2
4
6
8
10
12
14
16
18
20
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
0
0.05
0.1
0.15
0.2
0.25
0.3
0
5
10
15
20
25
30
35
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
3.2 V
5 V
3.4 V
3 V
2.8V
2.6 V
2.4 V
Normalised On-state Resistance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction temperature, Tj (C)
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
August 1999
4
Rev 1.500
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