參數(shù)資料
型號： 934055348118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, DPAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 147K
代理商： 934055348118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP11N06LT, PHB11N06LT
Logic level FET
PHD11N06LT
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 3.3 A;
-
25
mJ
energy
t
p = 220 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 5 V; refer to
fig:15
I
AS
Peak non-repetitive
-
10.3
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
4.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
60
-
K/W
to ambient
SOT428 and SOT404 package, pcb
50
-
K/W
mounted, minimum footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 5.5 A
-
100
130
m
resistance
V
GS = 5 V; ID = 5.5 A
-
120
150
m
T
j = 175C
-
250
315
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 5.5 A
4
7
-
S
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 10 A; VDD = 44 V; VGS = 5 V
-
5.2
-
nC
Q
gs
Gate-source charge
-
1.2
-
nC
Q
gd
Gate-drain (Miller) charge
-
3.0
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; RD = 2.7 ;-
6
16
ns
t
r
Turn-on rise time
R
G = 10 ; VGS = 5 V
-
64
80
ns
t
d off
Turn-off delay time
Resistive load
-
20
30
ns
t
f
Turn-off fall time
-
26
40
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
250
330
pF
C
oss
Output capacitance
-
55
75
pF
C
rss
Feedback capacitance
-
42
55
pF
August 1999
2
Rev 1.000
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