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參數(shù)資料
| 型號： | 934055217135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.25 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 59K |
| 代理商： | 934055217135 |
1998 Aug 31
2
Philips Semiconductors
Product specication
High-speed diode
BAS516
FEATURES
Ultra small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
APPLICATIONS
High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD523) and symbol.
Marking code: 6.
handbook, halfpage12
Top view
MAM408
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
Ts =90 °C; note 1; see Fig.2
250
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts =90 °C; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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