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參數資料
| 型號： | 934055198114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數： | 8/14頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 934055198114 |
2003 Apr 15
3
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20
m
spot size at hotspot.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance at Th =25 °C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCES
collector-emitter voltage
RBE =0
75
V
VEBO
emitter-base voltage
open collector
2V
ICM
peak collector current
tp ≤ 100 s; δ≤ 10%
6A
Ptot
total power dissipation
tp = 100 s; δ = 10%; Tmb =25 °C
80
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤ 10 s
235
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
tp = 100 s; δ = 10%; note 1
0.71
K/W
tp = 300 s; δ = 10%; note 1
0.99
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 15 mA; open emitter
75
V
V(BR)CES
collector-emitter breakdown voltage IC = 15 mA; VBE =0
75
V
ICBO
collector leakage current
VCB =40V; IE =0
1.5
mA
ICES
collector leakage current
VCE =40V; VBE =0
3mA
IEBO
emitter leakage current
VEB = 1.5 V; IC =0
0.3
mA
hFE
DC current gain
VCB =5V; IC = 1.5 A
40
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 s; δ = 10%
3.1 to 3.5
40
≥50
typ. 55
≥7
typ. 8
≥35
typ. 40
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