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參數(shù)資料
| 型號(hào)： | 934055171115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 20 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMD, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934055171115 |
1998 Oct 15
2
Philips Semiconductors
Product specication
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
FEATURES
ESD rating >15 kV, according to IEC1000-4-2
SOT457 surface mount package
Non-clamping range: 5Vto+5V
Channel separation: >70 dB
Low reverse current: <100 nA
Low diode capacitance: <75 pF.
APPLICATIONS
Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:
– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
– Portable electronics.
DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.
PINNING
PIN
DESCRIPTION
1
cathode 1
2, 5
ground
3
cathode 2
4
cathode 3
6
cathode 4
Fig.1 Simplified outline (SOT457) and symbol.
Marking code: Z8.
handbook, halfpage
13
2
4
5
6
Top view
MAM409
13
2
4
5
6
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse; see Fig.2
2A
PZSM
non-repetitive peak power
tp = 1 ms; square pulse
20
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
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