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| 型號(hào)： | 934055126115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 934055126115 |
1999 May 25
4
Philips Semiconductors
Preliminary specication
PNP resistor-equipped transistor
PDTA124XEF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
103
102
10
1
MGL556
101
1
10
hFE
IC (mA)
102
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
103
102
10
MGL557
101
1
10
IC (mA)
102
(1)
(2)
(3)
VCEsat
(mV)
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
104
103
102
MGL558
102
101
1
IC (mA)
Vi(off)
(mV)
10
(1)
(2)
(3)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
104
103
102
MGL559
101
1
10
IC (mA)
Vi(on)
(mV)
102
(1)
(2)
(3)
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