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參數(shù)資料
| 型號： | 934055093127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 9 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AB |
| 封裝： | PLASTC, FULLPACK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 934055093127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4515AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
mA
T
j = 125 C
I
EBO
Emitter cut-off current
V
EB = 7.5 V,IC = 0 A
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 6.0 A; IB = 1.5 A
-
3.0
V
BEsat
Base-emitter saturation voltage
I
C = 6.0 A; IB = 1.5 A
0.85
0.94
1.03
V
h
FE
DC current gain
I
C = 100 mA; VCE = 5 V
-
10
-
h
FE
I
C = 6 A; VCE = 5 V
4.2
5.7
7.3
DYNAMIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat = 6.0 A;IB1 = 1.2 A
deflection circuit)
(I
B2 = -3.0 A)
t
s
Turn-off storage time
3.3
4.2
s
t
f
Turn-off fall time
0.36
0.5
s
Switching times (64 kHz line
I
Csat = 5.0 A;IB1 = 1.0 A
deflection circuit)
(I
B2 = -3.3 A)
t
s
Turn-off storage time
1.8
-
s
t
f
Turn-off fall time
0.23
-
s
2 Measured with half sine-wave voltage (curve tracer).
June 1999
2
Rev 1.000
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