1997 Feb 20
2
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and low
thermal resistance
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol (SOT439A).
olumns
e
c
b
MAM045
1
2
Top view
3
Fig.2 Simplified outline and symbol (SOT443A).
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplier.
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(
)
Class-C; tp =10 s; δ = 10 %
0.960 to 1.215
50
>100
>7
>42
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.