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參數(shù)資料
| 型號(hào)： | 934054836113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.4 A, 600 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, MAM123, 2 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大小： | 116K |
| 代理商： | 934054836113 |
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1998 Dec 04
3
Philips Semiconductors
Product specication
Fast soft-recovery controlled
avalanche rectiers
BYD53 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Tamb =65 °C; see Figs 8 and 9
BYD53D to M
3.6
A
BYD53U and V
4.45
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
5A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.12
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 13 and 14
BYD53D to M
2.1
V
BYD53U and V
1.7
V
VF
forward voltage
IF = 1 A; see Figs 13 and 14
BYD53D to M
3.6
V
BYD53U and V
2.3
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD53D
300
V
BYD53G
500
V
BYD53J
700
V
BYD53K
900
V
BYD53M
1100
V
BYD53U
1300
V
BYD53V
1500
V
IR
reverse current
VR =VRRMmax; see Fig.15
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.15
100
A
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.18
BYD53D to J
30
ns
BYD53K and M
75
ns
BYD53U and V
150
ns
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.16
20
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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