參數(shù)資料
型號(hào): 934054835113
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.4 A, 800 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, MAM123, 2 PIN
文件頁(yè)數(shù): 10/14頁(yè)
文件大?。?/td> 116K
代理商: 934054835113
1998 Dec 04
5
Philips Semiconductors
Product specication
Fast soft-recovery controlled
avalanche rectiers
BYD53 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYD53D to M
a = 1.42; VR =VRRMmax; δ = 0.5.
Switched mode application.
handbook, halfpage
0
200
160
120
1.0
0
0.2
MGM267
0.4
0.6
0.8
80
40
IF(AV)
(A)
Ttp (°C)
BYD53U and V
a = 1.42; VR =VRRMmax; δ = 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MLC303
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
handbook, halfpage
0
0.6
0.4
0.2
0
200
80
120
160
40
MGM266
IF(AV)
(A)
Tamb (°C)
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD53U and V
a = 1.42; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.2
0.8
0.6
MLC304
100
I F(AV)
(A)
T
( C)
o
0.4
amb
BYD53D to M
a = 1.42; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
相關(guān)PDF資料
PDF描述
934054836113 0.4 A, 600 V, SILICON, SIGNAL DIODE
934054837163 0.4 A, 400 V, SILICON, SIGNAL DIODE
934054837113 0.4 A, 400 V, SILICON, SIGNAL DIODE
934054835163 0.4 A, 800 V, SILICON, SIGNAL DIODE
934054836163 0.4 A, 600 V, SILICON, SIGNAL DIODE
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