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參數(shù)資料
| 型號(hào)： | 934054831115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.155 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, EMT3, SC-75, SMPAK-3 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 934054831115 |
1998 Jan 20
2
Philips Semiconductors
Product specication
High-speed diode
BAS16T
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS16T is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
very small plastic SMD SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
Marking code: A6.
handbook, 4 columns
1
Top view
MAM393
2
3
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
Ts =90 °C; see Fig.2
155
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square pulse; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts =90 °C
170
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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