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參數(shù)資料
| 型號(hào)： | 934054711235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 643K |
| 代理商： | 934054711235 |
2000 Jul 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
FEATURES
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
APPLICATIONS
Power management
DC to DC converters
Battery powered applications
'Glue-logic'; interface between logic blocks and/or
periphery
General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
s
source
3
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM273
2
1
3
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETERS
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
60
V
VSD
source-drain diode forward voltage
VGD = 0; IS = 0.5 A
1V
VGS
gate-source voltage (DC)
±20
V
VGSth
gate-source threshold voltage
VDS =VGS; ID =1mA
1
V
ID
drain current (DC)
Ts =80 °C
0.7
A
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.35 A
0.81
Ptot
total power dissipation
Ts =80 °C
0.5
W
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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| 05H12 | General Description |
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