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參數(shù)資料
| 型號(hào)： | 934054660127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 550 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 934054660127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C = f (Tmb)
Fig.8. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IB); Tj=25C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat = f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
IC/A
VBEsat/V
0.0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
IC/A
VCEsat/V
0.01
1
100
10
1
0.1
10
h FE
IC / A
Tj = 25 C
1V
5V
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
tp
T
P
t
D
tp
D=
December 1998
4
Rev 1.200
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