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參數(shù)資料
| 型號(hào)： | 934054540127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 65K |
| 代理商： | 934054540127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP21N06T
Standard level FET
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1.0E-06
0.0001
0.01
1
100
0.01
0.1
1
10
Zth/ (K/W)
t/s
0.5
0.2
0.1
0.05
0.02
0
D =
tp
T
P
t
D
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
02468
10
0
10
20
30
40
50
ID/A
VDS/V
VGS/V =
16
14
12
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
1
10
100
1
10
100
tp =
1 us
10us
100 us
1 ms
10ms
100ms
VDS/V
RDS(ON) = VDS/ID
DC
ID/A
0
5
10
15
20
25
30
50
60
70
80
90
100
110
120
RDS(ON)/mOhm
VGS/V =
6
6.5
7
8
9 10
ID/A
December 1997
4
Rev 1.100
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