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參數(shù)資料
| 型號(hào)： | 934054140215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934054140215 |
1997 Dec 08
9
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
Fig.18 Cross-modulation test set-up.
handbook, full pagewidth
BF1109
BF1109R
BF1109WR
MDA626
Rgen
50
50
R1 =
50
10 k
G2
G1
D
S
10 nF
Vi
10 nF
4.7 nF
47
H
4.7 nF
VG2
VDS
Table 1
Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID =12mA
Table 2
Noise data: VDS = 9 V; VG2-S = 4 V; ID =12mA
f
(MHz)
S11
S21
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.995
3.71
3.013
175.0
0.000
88.2
0.998
1.8
100
0.992
7.29
3.002
170.2
0.001
83.7
0.997
3.5
200
0.984
14.3
2.967
160.7
0.002
86.2
0.995
7.0
300
0.973
21.2
2.922
151.3
0.002
83.2
0.992
10.5
400
0.961
27.9
2.869
142.0
0.003
84.1
0.990
13.9
500
0.944
34.4
2.793
132.9
0.003
85.7
0.987
17.2
600
0.926
40.8
2.730
124.1
0.003
88.4
0.985
20.5
700
0.906
46.9
2.660
1115.3
0.003
94.6
0.983
23.7
800
0.887
52.9
2.605
106.5
0.004
107.2
0.981
26.8
900
0.868
58.8
2.527
97.8
0.004
114.9
0.977
30.0
1000
0.852
64.3
2.457
89.6
0.004
129.7
0.9377
33.1
f
(MHz)
Fmin
(dB)
Γopt
Rn
(
)
(ratio)
(deg)
800
1.5
0.684
40.94
40.4
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