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參數(shù)資料
| 型號(hào)： | 934054060118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 7.5 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 934054060118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B, PBYR745D series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 7.5 A
Low thermal resistance
V
F ≤ 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.
The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40B
45B
PBYR7
40D
45D
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 114 C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 136 C
-
7.5
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 136 C
-
15
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
PBYR7..B
-
135
A
current
t = 8.3 ms
-
150
A
t = 10 ms
PBYR7..D
-
100
A
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.
k
a
tab
3
1
2
3
tab
13
tab
2
July 1998
1
Rev 1.200
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