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參數(shù)資料
| 型號： | 934052910115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 934052910115 |
1997 Oct 21
6
Philips Semiconductors
Product specication
High-speed switching diode array
BAV756S
Fig.6 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V
I x R
RF
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Forward recovery voltage test circuit and waveforms.
t r
t
t p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
V fr
t
output
signal
V
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ≤ 0.005.
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