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參數(shù)資料
| 型號(hào)： | 934051250135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 934051250135 |
1998 Aug 03
3
Philips Semiconductors
Product specication
AM PIN diode
BAQ806
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m, see Fig. 15
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig. 15.
For more information please refer to the
‘General Part of Handbook SC10’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Figs 2 and 3
0.9
1.1
V
IF = 100 mA; Tj =Tj max;
see Figs 2 and 3
0.7
0.9
V
IR
reverse current
VR = 100 V; see Fig. 4
0.1
A
VR = 100 V; Tj = 125 °C; see Fig. 4
30
A
τ
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; measured at 10% of IR;
see Fig. 13
15
25
s
Cd
diode capacitance
f = 1 MHz; see Figs 5, 6, 7 and 8
VR =0V
911
pF
VR =2V
56
pF
rD
diode forward resistance
f = 100 kHz; see Figs 9 and 14
IF =10 A
3300
6000
IF = 100 A
560
900
IF =1mA
62
90
IF =10mA
710
rs
diode series resistance
f = 100 kHz; see Figs 10, 11 and 12
VR = 0 V
1000
2100
k
VR = 2 V
5000
12000
k
f = 1 MHz; see Figs 10, 11 and 12
VR =0V
25
50
k
VR = 2 V
100
250
k
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
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