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參數(shù)資料
| 型號(hào)： | 934051200112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 49K |
| 代理商： | 934051200112 |
2001 Nov 15
3
Philips Semiconductors
Product specication
750 MHz, 34 dB gain push-pull amplier
BGE788
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75 .
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
2. Measured according to DIN45004B;
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
33.5
34.5
dB
f = 750 MHz
34
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0.5
2.5
dB
FL
atness of frequency response
f = 40 to 750 MHz
±0.5
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 750 MHz
14
dB
s22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 750 MHz
14
dB
s21
phase response
f = 50 MHz
135
225
deg
CTB
composite triple beat
110 channels at;
Vo = 44 dBmV; measured at
745.25 MHz
49
dB
Xmod
cross modulation
110 channels at;
Vo = 44 dBmV; measured at
55.25 MHz
51
dB
CSO
composite second order distortion
110 channels at;
Vo = 44 dBmV; measured at
746.5 MHz
52
dB
d2
second order distortion
note 1
64
dB
Vo
output voltage
dim = 60 dB; note 2
58
dBmV
F
noise gure
f = 750 MHz
7dB
PM
positive match
f = 40 MHz to 2 GHz
3dB
Itot
total current consumption (DC)
note 3
290
320
mA
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