參數(shù)資料
型號(hào): 934051020115
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, EMT3, SMD, SC-75, SMPAK-3
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 77K
代理商: 934051020115
2000 Nov 15
3
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846T; BC847T series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current VCB =30V; IE =0
15
nA
VCB =30V; IE = 0; Tj = 150 °C
5
A
IEBO
emitter cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =5V; IC =2mA
BC846AT; BC847AT
110
220
BC846BT; BC847BT
200
450
BC847CT
420
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA;
200
mV
IC = 100 mA; IB = 5 mA; note 1
400
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
700
mV
IC = 10 mA; VCE =5V
770
mV
Cc
collector capacitance
VCB = 10 V; f = 1 MHz; IE =ie =0
1.5
pF
Ce
emitter capacitance
VEB = 0.5 V; f = 1 MHz; IC =ic =0
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
F
noise gure
VCE =5V; IC = 200 A; RS =2k;
f = 1 kHz; B = 200 Hz
10
dB
相關(guān)PDF資料
PDF描述
934051010115 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
934051000115 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
934051040115 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
934051100115 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934051080115 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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