參數(shù)資料
型號(hào): 934051000115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, EMT3, SMD, SC-75, SMPAK-3
文件頁數(shù): 7/12頁
文件大?。?/td> 77K
代理商: 934051000115
2000 Nov 15
4
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846T; BC847T series
GRAPHICAL INFORMATION BC847AT
handbook, halfpage
MGT723
101
110
102
103
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT724
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
MGT725
101
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT726
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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