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參數(shù)資料
| 型號(hào)： | 934050600113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 934050600113 |
1997 Aug 26
3
Philips Semiconductors
Product specication
AM PIN diode
BAQ800
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied; all characteristics must be tested in the dark because of the light sensitivity
of this product.
THERMAL CHARACTERISTICS
All characteristics must be tested in the dark because of the light sensitivity of this product.
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.17.
For more information please refer to the
“General Part of Handbook SC01”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Figs 4 and 5
0.9
1.1
V
IF = 100 mA; Tj =Tj max;
see Figs 4 and 5
0.7
0.9
V
IR
reverse current
VR = 100 V; see Fig.14
0.1
A
VR = 100 V; Tj = 125 °C; see Fig.14
30
A
τ
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; measured at 10% of IR;
see Fig.15
10
20
s
Cd
diode capacitance
f = 1 MHz; see Figs 6, 7, 8 and 9
VR =0
10
12
pF
VR =2V
56
pF
rD
diode forward resistance
f = 100 kHz; see Figs 10 and 16
IF =10 A
3100
6000
IF = 100 A
380
800
IF =1mA
42
80
IF =10mA
510
rs
diode series resistance
f = 100 kHz; see Figs 11, 12 and 13
VR = 0
1000
2200
k
VR = 2 V
5000
11000
k
f = 1 MHz; see Figs 11, 12 and 13
VR = 0
25
50
k
VR = 2 V
100
220
k
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
120
K/W
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